Triboelectric nanogenerator (TENG) is considered to be a high open circuit voltage device and has been used to drive ion sources, plasma sources, electrospinning, and dielectric elastomers. However, it has to reach thousands of volts. High voltage often requires a larger device area, higher friction, or an external voltage doubler circuit, and cannot fully meet the needs of practical applications. In addition, the open circuit voltage values ​​reported in the literature also have a large dispersion. How to use TENG to produce stable high voltage output with high efficiency under weak mechanical drive is an important issue that needs to be solved.
Recently, the research team led by Wang Zhonglin, director of the Beijing Institute of Nano-Energy and Systems, Chinese Academy of Sciences and director professor of the Lifelong School of Georgia Institute of Technology, and Yin Zhouping, a professor at Huazhong University of Science and Technology, successfully developed a charge compensation mechanism to achieve TENG High voltage output method. The researchers found that by introducing a charge compensation channel composed of high-voltage diodes in TENG, the open circuit voltage of TENG can be significantly increased. For the contact separation TENG, the open circuit voltage can be increased from about 230V to more than 3300V, which is more than 10 times higher. By paralleling or corona polarizing the generator, the output open-circuit voltage can be further increased to a maximum of 7000V, and at the same time, the high-voltage capacitor can be charged to thousands of volts. The above high voltage can achieve stable output under the condition of gently pressing TENG. The researchers also designed experimental methods to directly measure and characterize the above high voltage. The working principle of the charge compensation mechanism is to automatically compensate the dissipated charge in the two electrodes of the TENG under the open circuit condition through the diode, so that the charge distribution in the electrode is maintained in the state most conducive to generating a high voltage output. The related theoretical analysis also explains the reason why the open circuit voltage measured in the experiment is discrete. Based on this high-voltage TENG, a self-driven electrostatic adsorption system was produced. By pressing TENG to supply high-voltage electricity to the electrostatic chuck, it successfully realized the adsorption and manipulation of conductors, semiconductors and insulators, and realized the adsorption of heavy objects with a weight of about 0.35Kg. This work proposes a stable ultra-high voltage source and high voltage generation mechanism based on TENG. Due to the universality of the mechanism, it can also be applied to the voltage enhancement of other modes of TENG. It is portable, flexible and low cost in various needs. The occasion of the ultra-high voltage source has broad application prospects. Related results were published on the recent ACS Nano under the title of Giant Voltage Enhancement via Triboelectric Charge Supplement Channel for Self-Powered Electroadhesion
(a) Schematic diagram of the charge compensation channel; (b) Voltage enhancement effect of different TENG devices; (c) Comparison of the effect of charge compensation on the open circuit voltage of the TENG unit; (d) The voltage realized by the self-driven electrostatic adsorption system under different pressing times And adsorption force; (e, f) Self-driven electrostatic adsorption system to achieve the adsorption and manipulation of silicon wafers and heavy objects.
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