Recently, the team led by Li Can, the State Key Laboratory of Catalysis Fundamentals, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, and Academician of Chinese Academy of Sciences, Solar Energy Research Department, and Dalian Liancheng CNC Machine Co., Ltd. developed a argon purification and recovery technology for photovoltaic single crystal furnaces. This technology provides technical guarantee for the large-scale production of photovoltaic crystalline silicon.
The content of argon in the air is extremely low (only 0.93%), and it is usually extracted as a by-product from the air separation oxygen production process, so the production cost of high-purity argon is higher. High-purity argon gas (purity> 99.999%) is an indispensable purification and protective gas in the preparation process of single crystal silicon and polycrystalline silicon. In recent years, the solar photovoltaic power generation industry has developed rapidly, the demand for argon gas has surged, and its prices have continued to rise. There has even been a shortage of supply, which has seriously affected or even restricted the development of China's photovoltaic industry. The argon purification and recovery technology abroad is expensive and the production capacity is limited. Therefore, the development of low-cost, high-capacity argon purification and recovery technology with independent intellectual property rights has become an urgent task to be solved.
The team has recently developed high-activity, high-stability related catalytic technology, and developed a complete set of process technology and equipment according to the industrial needs of large-scale photovoltaic single crystal furnace argon purification and recovery. The medium sample machine was launched in December 2019 A successful drive in Baotou Meike Silicon Energy Co., Ltd. Under milder conditions, it effectively eliminates various impurities in the argon gas tail gas of the single crystal furnace. After purification, the concentration of various impurities in the argon gas is less than 0.5 ppm, which is far better than the PV6-1110 argon industry standard for photovoltaic crystalline silicon production process ( Impurity concentration <10 ppm). This technology can simultaneously meet the argon gas purification requirements of at least 4 to 6 single crystal furnaces under actual working conditions, which will greatly reduce the consumption of high-purity argon gas in the manufacturing process of crystalline silicon and help photovoltaic enterprises overcome the fluctuations in the supply of argon gas. influences. The successful start-up of the pilot plant laid a technical foundation for the subsequent mass production.
The successful research and development of this technology will further reduce the cost of solar power generation, bring considerable economic benefits to the solar photovoltaic industry, and effectively enhance the core competitiveness of China's photovoltaic industry.
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